Fluorine effect on As diffusion in Ge
نویسندگان
چکیده
G. Impellizzeri, S. Boninelli, F. Priolo, E. Napolitani, C. Spinella, A. Chroneos, and H. Bracht MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy MATIS IMM-CNR and Dipartimento di Fisica, Università di Padova, Via Marzolo 8, 35131 Padova, Italy IMM-CNR, VIII Strada 5, 95121 Catania, Italy Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ, United Kingdom Institute of Materials Physics, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
منابع مشابه
The Open University ’ s repository of research publications and other research outputs Fluorine effect on As diffusion in
The enhanced diffusion of donor atoms, via a vacancy (V)-mechanism, severely affects the realization of ultrahigh doped regions in miniaturized germanium (Ge) based devices. In this work, we report a study about the effect of fluorine (F) on the diffusion of arsenic (As) in Ge and give insights on the physical mechanisms involved. With these aims we employed experiments in Ge co-implanted with ...
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